網站地圖 | English / 繁中 / 简中
   
  專業晶圓製造服務
 
專業晶圓製造服務
專業技術
專業技術總覽
GaAs & GaN RF Technologies
InGaP HBT
GaAs PHEMT
0.5um D-Mode T-Gate PHEMT
0.5um Switch PHEMT
0.5um E/D-mode PHEMT
0.25um D-Mode T-Gate PHEMT Power Process
HFET
GaN HEMT
Integrated Passive Devices
THz Schottky Diode
InP HBT Technologies
GaN Power Electronics Technologies
Optoelectronics Technologies
晶圓製造服務
  首頁 > 專業晶圓製造服務 > 專業技術 > GaAs & GaN RF Technologies> GaAs PHEMT > 0.5um D-Mode T-Gate PHEMT
 
0.5um D-Mode T-Gate PHEMT
   
 
0.5 um D-Mode T-Gate PHEMT process has been developed for transceiver components (such as high power amplifier, gain block, low noise amplifier, switches and mixers) of up to 20 GHz.

0.5 um D-Mode T-Gate PHEMT process has been developed for transceiver components (such as high power amplifier, gain block, low noise amplifier, switches and mixers) of up to 20 GHz.

Download PDF


Typical Device Parameters

Parameter

Typical Value

Idsmax (mA/mm)

520

Idss (mA/mm)

300

Gm (mS/mm)

350

Vpo (V)

-1.0

BVgd (V)

>15

Ft (GHz)

33

Fmax (GHz)

90

Noise Figure @ 10GHz

< 0.9